dated : 07/12/2002 semtech electronics ltd. ( subsidiary of sino-tech internatio nal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? st 2sc458 npn silicon epitaxial planar transistor low frequency amplifier applications. the transistor is subdivided into three group, b, c and d according to its dc current gain. on special request, thes e transistors can be manufactured in different pin configurations. to-92 plastic package weight approx. 0.19g absolute maximum ratings (ta=25 ) symbol value unit collector base voltage v cbo 30 v collector emitter voltage v ceo 30 v emitter base voltage v ebo 5 v collector current i c 100 ma emitter current i e -100 ma power dissipation p tot 200 mw junction temperature t j 150 o c storage temperature range t s -55 to +150 o c
dated : 07/12/2002 semtech electronics ltd. ( subsidiary of sino-tech internatio nal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? st 2sc458 characteristics at t amb =25 o c symbol min. typ. max. unit dc current gain at v ce =12v, i c =2ma current gain group b c d h fe h fe h fe 100 160 250 - - - 200 320 500 - - - collector cutoff current at v cb =18v i cbo - - 0.5 a emitter cutoff current at v eb =2v i ebo - - 0.5 a collector emitter saturation voltage at i c =10ma, i b =1ma v ce(sat) - - 0.2 v transition frequency at v ce =12v, i c =2ma f t - 230 - mhz base emitter voltage at i c =2ma, v ce =12v v be - 0.67 0.75 v collector output capacitance at v cb =10v, f=1mhz c ob - 1.8 3.5 pf collector base breakdown voltage at i c =10 a v cbo 30 - - v collector emitter breakdown voltage at i c =1ma v ceo 30 - - v emitter base breakdown voltage at i c =10 a v ebo 5 - - v noise figure at v ce =6v, i c =0.1ma, f=1khz, r g =500 ? nf - 4 10 db small signal input impedance at v ce =5v, i c =0.1ma,f=270hz h ie h ie h ie h ie - - - - 16.5 70 130 11 - - - - k ? x10 -6 - s
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